suu50n03-07 vishay siliconix document number: 71295 s-01707?rev. a, 07-aug-00 www.vishay.com 1 n-channel 30-v (d-s) 175 _ cmosfet product summary v ds (v) r ds(on) ( ? ) i d (a) a, b 3 0 0.007 @ v gs =10v 25 30 0.010 @ v gs =4.5v 18 d g s n-channel mosfet order number: suu50n03-07 to-251 s gd top view and drain-tab absolute maximum ratings (t a =25 _ c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs ? 20 v c o n t i n u o u s d r a i n c u r r e n t ( t j = 1 7 5 _ c ) a , b t a =25 _ c i d 25 continuous drain current (t j = 175 _ c) a, b t a = 100 _ c i d 18 a pulsed drain current i dm 100 a continuous source current (diode conduction) a, b i s 25 m a x i m u m p o w e r d i s s i p a t i o n t c =25 _ c p d 88 w maximum power dissipation t a =25 _ c p d 8.3 a, b w operating junction and storage temperature range t j ,t stg --55 to 175 _ c thermal resistance ratings parameter symbol typical maximum unit j t i t a b i t a t 10 sec r 15 18 junction-to-ambient a steady state r thja 40 50 _ c/w junction-to-case r thjc 1.4 1.7 c / notes a. surface mounted on 1? x1? fr4 board. b. t 10 sec.
suu50n03-07 vishay siliconix www.vishay.com 2 document number: 71295 s-01707?rev. a, 07-aug-00 specifications (t j =25 _ c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d = 250 m a 30 v gate threshold voltage v gs(th) v ds =v gs ,i d = 250 m a 1.0 2.0 v gate-body leakage i gss v ds =0v,v gs = ? 20 v ? 100 na z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v ds =30v,v gs =0v 1 m a zero gate v oltage drain current i dss v ds =30v,v gs =0v,t j = 125 _ c 50 m a on-state drain current b i d(on) v ds =5v,v gs =10v 50 a v gs =10v,i d =20a 0.007 drain-source on-state resistance b r ds(on) v gs =10v,i d =20a,t j = 125 _ c 0.011 ? d s ( o n ) v gs =4.5v,i d =20a 0.010 forward transconductance b g fs v ds =15v,i d =20a 20 s dynamic a input capacitance c iss 3720 output capacitance c oss v gs =0v,v ds =25v,f=1mhz 715 pf reverse transfer capacitance c rss 370 total gate charge c q g 60 120 gate-source charge c q gs v ds =15v, v gs =10v,i d =50a 12 nc gate-drain charge c q gd d s , g s , d 10 turn-on delay time c t d(on) 11 25 rise time c t r v d d =15 v ,r l =0.3 ? 6 15 n s turn-off delay time c t d(off) v d d = 1 5 v , r l = 0 . 3 ? ? 50 a, v gen =10v,r g =2.5 ? 50 100 ns fall time c t f 11 20 source-drain diode ratings and characteristic (t c =25 _ c) pulsed current i sm 100 a diode forward voltage b v sd i f = 100 a, v gs =0v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ m s 45 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 m s, duty cycle 2%. c. independent of operating temperature.
suu50n03-07 vishay siliconix document number: 71295 s-01707?rev. a, 07-aug-00 www.vishay.com 3 typical characteristics (25 _ c unless noted) 0 1000 2000 3000 4000 5000 0 6 12 18 24 30 0 2 4 6 8 10 0 1224364860 0.000 0.005 0.010 0.015 0.020 0 20406080100 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 50 100 150 200 250 0246810 0 20 40 60 80 100 120 0 1020304050 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds -- drain-to-source voltage (v) -- drain current (a) i d v gs -- gate-to-source voltage (v) -- drain current (a) i d -- gate-to-source voltage (v) -- on-resistance ( q g -- total gate charge (nc) i d -- drain current (a) v ds -- drain-to-source voltage (v) c -- capacitance (pf) r ds(on) ? ) v gs -- transconductance (s) g fs -- 5 5 _ c 5v t c = 125 _ c v ds =15v i d =50a v gs =10thru6v v gs =10v v gs =4.5v c rss t c =--55 _ c 25 _ c 125 _ c 3v c oss c iss i d -- drain current (a) 25 _ c 4v 2v
suu50n03-07 vishay siliconix www.vishay.com 4 document number: 71295 s-01707?rev. a, 07-aug-00 typical characteristics (25 _ c unless noted) 0.0 0.4 0.8 1.2 1.6 2.0 --50 --25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage (normalized) -- on-resistance ( t j -- junction temperature ( _ c) v sd -- source-to-drain voltage (v) r ds(on) ? ) -- source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs =10v i d =30a t j =25 _ c t j = 150 _ c 0 thermal ratings 0 6 12 18 24 30 0 25 50 75 100 125 150 175 safe operating area v ds -- drain-to-source voltage (v) -- drain current (a) i d 10 0.01 0.1 1 10 100 limited by r ds(on) 1 1000 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 -- 4 10 -- 3 10 -- 2 10 -- 1 1 100 normalized effective transient thermal impedance maximum avalanche drain current vs. case temperature t c -- case temperature ( _ c) -- drain current (a) i d 600 0.1 100 t a =25 _ c single pulse 1ms 10 ms 100 ms 100 s, dc 100 m s 10 m s 1s 10 s 10 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5
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